Resistivities ρ c < 0.08 Ω cm 2 were found. The contact resistivity ρ c has been measured. It is shown, by XPS depth profile, that MoSe 2 is present at the interface. After co-evaporation of a Cu(In 1-xGa x)Se 2 film the chemical and electrical properties of the Cu(In 1-xGa x)Se 2/Mo interface have been studied. Using an rf diode sputtering apparatus, adhesive films with small resistivity, ρ = 40 μΩ cm, can be achieved by modifying argon pressure during deposition. to the internal constraints present in the films. interviews with the experts from the Indonesian Ministry of Finances LPSE. It is shown that the suitability of Mo films for such process depends strongly on the target-substrate distance and the argon pressure during deposition, i.e. In its implementation, there were found many factors that could hinder the. During the solar cells process the Mo film is submitted to thermal and chemical constraints, therefore it should exhibits some specific properties to keep its mechanical and electrical properties. Molybdenum thin film is the under electrode used in chalcopyrite solar cells family (CuInSe 2 and its alloys) because of the low resistivity of the Mo/CIS contact.
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